AM3414 datasheet, mosfet equivalent, AiT Semiconductor

Features and benefits

* 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V
* 30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V
* 30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V
* Super high density cell de.

Application

The AM3414 is available in SOT-23 Package P-CHANNEL MOSFET FEATURES
* 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V
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Description

The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V. This device is suitable fo.

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